| /* | 
 |  * $Id: mtd-abi.h,v 1.7 2004/11/23 15:37:32 gleixner Exp $ | 
 |  * | 
 |  * Portions of MTD ABI definition which are shared by kernel and user space  | 
 |  */ | 
 |  | 
 | #ifndef __MTD_ABI_H__ | 
 | #define __MTD_ABI_H__ | 
 |  | 
 | #ifndef __KERNEL__ /* Urgh. The whole point of splitting this out into | 
 | 		    separate files was to avoid #ifdef __KERNEL__ */ | 
 | #define __user | 
 | #endif | 
 |  | 
 | struct erase_info_user { | 
 | 	uint32_t start; | 
 | 	uint32_t length; | 
 | }; | 
 |  | 
 | struct mtd_oob_buf { | 
 | 	uint32_t start; | 
 | 	uint32_t length; | 
 | 	unsigned char __user *ptr; | 
 | }; | 
 |  | 
 | #define MTD_ABSENT		0 | 
 | #define MTD_RAM			1 | 
 | #define MTD_ROM			2 | 
 | #define MTD_NORFLASH		3 | 
 | #define MTD_NANDFLASH		4 | 
 | #define MTD_PEROM		5 | 
 | #define MTD_OTHER		14 | 
 | #define MTD_UNKNOWN		15 | 
 |  | 
 | #define MTD_CLEAR_BITS		1       // Bits can be cleared (flash) | 
 | #define MTD_SET_BITS		2       // Bits can be set | 
 | #define MTD_ERASEABLE		4       // Has an erase function | 
 | #define MTD_WRITEB_WRITEABLE	8       // Direct IO is possible | 
 | #define MTD_VOLATILE		16      // Set for RAMs | 
 | #define MTD_XIP			32	// eXecute-In-Place possible | 
 | #define MTD_OOB			64	// Out-of-band data (NAND flash) | 
 | #define MTD_ECC			128	// Device capable of automatic ECC | 
 | #define MTD_NO_VIRTBLOCKS	256	// Virtual blocks not allowed | 
 |  | 
 | // Some common devices / combinations of capabilities | 
 | #define MTD_CAP_ROM		0 | 
 | #define MTD_CAP_RAM		(MTD_CLEAR_BITS|MTD_SET_BITS|MTD_WRITEB_WRITEABLE) | 
 | #define MTD_CAP_NORFLASH        (MTD_CLEAR_BITS|MTD_ERASEABLE) | 
 | #define MTD_CAP_NANDFLASH       (MTD_CLEAR_BITS|MTD_ERASEABLE|MTD_OOB) | 
 | #define MTD_WRITEABLE		(MTD_CLEAR_BITS|MTD_SET_BITS) | 
 |  | 
 |  | 
 | // Types of automatic ECC/Checksum available | 
 | #define MTD_ECC_NONE		0 	// No automatic ECC available | 
 | #define MTD_ECC_RS_DiskOnChip	1	// Automatic ECC on DiskOnChip | 
 | #define MTD_ECC_SW		2	// SW ECC for Toshiba & Samsung devices | 
 |  | 
 | /* ECC byte placement */ | 
 | #define MTD_NANDECC_OFF		0	// Switch off ECC (Not recommended) | 
 | #define MTD_NANDECC_PLACE	1	// Use the given placement in the structure (YAFFS1 legacy mode) | 
 | #define MTD_NANDECC_AUTOPLACE	2	// Use the default placement scheme | 
 | #define MTD_NANDECC_PLACEONLY	3	// Use the given placement in the structure (Do not store ecc result on read) | 
 |  | 
 | struct mtd_info_user { | 
 | 	uint8_t type; | 
 | 	uint32_t flags; | 
 | 	uint32_t size;	 // Total size of the MTD | 
 | 	uint32_t erasesize; | 
 | 	uint32_t oobblock;  // Size of OOB blocks (e.g. 512) | 
 | 	uint32_t oobsize;   // Amount of OOB data per block (e.g. 16) | 
 | 	uint32_t ecctype; | 
 | 	uint32_t eccsize; | 
 | }; | 
 |  | 
 | struct region_info_user { | 
 | 	uint32_t offset;		/* At which this region starts,  | 
 | 					 * from the beginning of the MTD */ | 
 | 	uint32_t erasesize;		/* For this region */ | 
 | 	uint32_t numblocks;		/* Number of blocks in this region */ | 
 | 	uint32_t regionindex; | 
 | }; | 
 |  | 
 | #define MEMGETINFO              _IOR('M', 1, struct mtd_info_user) | 
 | #define MEMERASE                _IOW('M', 2, struct erase_info_user) | 
 | #define MEMWRITEOOB             _IOWR('M', 3, struct mtd_oob_buf) | 
 | #define MEMREADOOB              _IOWR('M', 4, struct mtd_oob_buf) | 
 | #define MEMLOCK                 _IOW('M', 5, struct erase_info_user) | 
 | #define MEMUNLOCK               _IOW('M', 6, struct erase_info_user) | 
 | #define MEMGETREGIONCOUNT	_IOR('M', 7, int) | 
 | #define MEMGETREGIONINFO	_IOWR('M', 8, struct region_info_user) | 
 | #define MEMSETOOBSEL		_IOW('M', 9, struct nand_oobinfo) | 
 | #define MEMGETOOBSEL		_IOR('M', 10, struct nand_oobinfo) | 
 | #define MEMGETBADBLOCK		_IOW('M', 11, loff_t) | 
 | #define MEMSETBADBLOCK		_IOW('M', 12, loff_t) | 
 |  | 
 | struct nand_oobinfo { | 
 | 	uint32_t useecc; | 
 | 	uint32_t eccbytes; | 
 | 	uint32_t oobfree[8][2]; | 
 | 	uint32_t eccpos[32]; | 
 | }; | 
 |  | 
 | #endif /* __MTD_ABI_H__ */ |